Page 1
Po wer Transistors
2SD1256
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB933
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of foward current transfer ratio h
●
Large collector current I
●
N type package enabling direct soldering of the radiating fin to
C
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
130
80
7
10
5
40
1.3
150
–55 to +150
FE
Unit
W
˚C
˚C
Unit: mm
8.5±0.2
6.0±0.5
10.0±0.310.5min.
1.5max.
2.0 1.5±0.1
V
0.8±0.1
2.54±0.3
5.08±0.5
213
8.5±0.2
6.0±0.3
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
V
V
A
A
10.0±0.3
4.4±0.5
2.0
5.08±0.5
123
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
+0.4
0 to 0.4
–0.2
14.7±0.5
3.0
4.4±0.5
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Rank R Q P
h
FE2
60 to 120 90 to 180 130 to 260
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 2A
IC = 4A, IB = 0.2A
IC = 4A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 50V
min
80
45
60
typ
30
0.5
1.5
0.15
max
10
50
260
0.5
1.5
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD1256
PC—Ta IC—V
50
)
W
(
(1)
40
C
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
Collector current IC (A
IC/IB=20
)
CE
6
5
)
A
(
4
C
3
2
IB=100mA
Collector current I
1
0
0654132
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
TC=100˚C
25˚C
100
–25˚C
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
70mA
C
50mA
40mA
T
30mA
VCE=2V
=25˚C
C
20mA
10mA
)
)
100
V
(
30
CE(sat)
10
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
3
1
0.01 0.1 1 100.03 0.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=10V
f=10MHz
T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=20
–25˚C
)
=25˚C
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
054132
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=10(IB1=–IB2)
I
C/IB
=50V
V
CC
T
=25˚C
C
Area of safe operation (ASO)
100
30
I
)
CP
10
A
(
I
C
C
3
t
stg
t
on
t
f
Collector current I
)
10ms
1
0.3
0.1
0.03
0.01
1 10 100 10003 30 300
Collector to emitter voltage VCE (V
Non repetitive pulse
T
C
1ms
300ms
=25˚C
t=0.5ms
)
Page 3
Po wer Transistors 2SD1256
R
—t
–1
10
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
3
1010
110
Time t (s
)
2
10
4
10
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
–2
10
3
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