Page 1
Po wer Transistors
2SD1252, 2SD1252A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB929 and 2SB929A
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
●
Low collector to emitter saturation voltage V
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1252
2SD1252A
2SD1252
2SD1252A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE1
Rank R Q P
h
FE1
40 to 90 70 to 150 120 to 250
Symbol
2SD1252
2SD1252A
2SD1252
2SD1252A
2SD1252
2SD1252A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Symbol
I
CES
I
CEO
I
EBO
V
CEO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
CE(sat)
=25˚C)
C
Ratings
60
80
60
80
6
5
3
35
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
10.0±0.310.5min.
10.0±0.3
4.4±0.5
2.0 1.5±0.1
2.0
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
123
min
60
80
40
10
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
+0
typ
0.5
2.5
0.4
–0.4
1.5
30
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
14.7±0.5
3.0
max
200
200
300
300
1
4.4±0.5
0 to 0.4
Unit
µA
µA
mA
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
250
1.8
1.2
MHz
V
V
V
µs
µs
µs
1
Page 2
Po wer Transistors 2SD1252, 2SD1252A
PC—Ta IC—V
50
)
W
(
40
C
(1)
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 10.03 0.3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
TC=100˚C
25˚C
Collector current IC (A
)
IC/IB=10
–25˚C
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
IB=7mA
6mA
5mA
4mA
3mA
2mA
Collector current I
0.2
0
02420164128
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
300
100
30
10
Forward current transfer ratio h
3
1
0.01 0.1 1 100.03 0.3 3
25˚C
–25˚C
Collector current IC (A
=25˚C
T
C
1mA
VCE=4V
IC—V
BE
8
7
)
6
A
(
C
5
4
3
2
Collector current I
1
0
02.42.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
0.01 0.1 1 100.03 0.3 3
)
25˚C
TC=100˚C
–25˚C
fT—I
C
Collector current IC (A
V
CE
VCE=5V
f=10MHz
T
=25˚C
C
)
=4V
)
Area of safe operation (ASO) R
100
30
)
10
A
(
I
CP
C
3
I
C
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
300ms
Non repetitive pulse
=25˚C
T
C
t=10ms
1ms
2SD1252
2SD1252A
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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