Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1243
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-peak 15 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 60 V
Collector-emitter voltage Open base 60 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1243
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V
Collector-base breakdown voltage IC=1mA ;IE=0 60 V
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V
Base-emitter saturation voltage IC=5A ;IB=0.5A 2.0 V
Collector cut-off current VCB=60V; IE=0 50
Emitter cut-off current VEB=5V; IC=0 50
μA
μA
hFE DC current gai n IC=3A ; VCE=3V 50
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1243
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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