Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1233
DESCRIPTION
·High DC Current Gain
: h
·Collector-Emitter Breakdown Voltage : V
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1500(Min.)@ IC= 4A, VCE= 3V
FE
(BR)CEO
= 100V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage 110 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 8 A
Collector Current-Peak 12 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150
Storage Temperature Range -55~150
70 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1233
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
f
T
h
FE
Switching Times
t
on
Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 110 V
Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA B 1.5 V
Base-Emitter Saturation Voltage IC= 4A, IB= 8mA B 2.0 V
Collector Cutoff current VCB= 80V, IE= 0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA
Current-Gain—Bandwidth Product IC= 4A; VCE= 5V 20 MHz
DC Current Gain IC= 4A; VCE= 3V 1500
Turn-On Time 0.6 μs
I
= 4A, IB1 = -IB2= 8mA;
t
stg
t
f
Storage Time 4.8 μs
Fall Time
C
= 12.5Ω; VCC= 50V
R
L
isc Website：www.iscsemi.cn
1.6 μs
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