Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1210
DESCRIPTION
·High DC Current Gain
: h
·Collector-Emitter Sustaining Voltage : V
APPLICATIONS
·Designed for audio frequency power amplifier and low
speed high current switching industrial use.
ABSOLUTE MAXIMUM RATINGS(T
= 1000(Min.)@ IC= 10A
FE
CEO(SUS)
= 100V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
T
Collector-Base Voltage 150 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current- Continuous 1 A
Collector Power Dissipation
=25℃
@T
a
C
Collector Power Dissipation
@T
=25℃
C
Junction Temperature 150 ℃
j
3
80
W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1210
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching Times
t
on
t
stg
t
f
Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA 1.5 V
Base-Emitter Saturation Voltage IC= 10A, IB= 25mA 2.0 V
Collector Cutoff current VCB= 100V, IE= 0 10
Emitter Cutoff Current VEB= 8V; IC= 0 5 mA
DC Current Gain IC= 10A; VCE= 2V 1000
Turn-On Time 1.0
Storage Time 5.0
Fall Time
IC = 10A,IB1 = -IB2= 25mA;
= 5Ω;VCC≈ 50V
R
L
2.0
μA
μs
μs
μs
isc Website：www.iscsemi.cn
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