Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1208
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High DC current gain
·Darlington
APPLICATIONS
·Power regulator for line
operated TV
PINNING
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 5 A
ICP Collector current (Pulse) 20 A
PC Collector power dissipation TC=25℃ 100 W
Collector-base voltage Open emitter 60±15 V
Collector-emitter voltage Open base 60±15 V
Emitter-base voltage Open collector 6 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -65~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1208
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO
V
CBO
V
CEsat-1
V
CEsat-2
V
BE
I
EBO
hFE DC current gai n IC=0.5A ; VCE=5V 2000 20000
Collector-emitter breakdown voltage IC=100mA ;IB=0 45 75 V
Collector-base breakdown voltage IC=100mA ;IE=0 45 75 V
Collector-emitter saturation voltage IC=0.5A ;IB=1mA 1.5 V
Collector-emitter saturation voltage IC=1A; IB=1mA 2.5 V
Base-emitter on voltage IC=0.5A;VCE=5V 1.8 V
Emitter cut-off current VEB=6V; IC=0 0.1 mA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1208
PACKAGE OUTLINE
Fig.2 outline dimentions
3
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