Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1185
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·High speed switching
APPLICATIONS
·Power switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 5 A
ICM Collector current-peak 7 A
PC Collector power dissipation TC=25℃ 50 W
Base
Fig.1 simplified outline (TO-3) and symbol
℃)
Collector-base voltage Open emitter 1200 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -45~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1185
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CES
I
EBO
hFE DC current gai n IC=0.3A ; VCE=5V 10 30
Switching times
tf Fall time 1.0
ts Storage time
Emitter-base breakdown voltage IE=10mA ;IC=0 6 V
I
Collector-emitter breakdown voltage
Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V
Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V
Collector cut-off current VCE=1200V; RBE=0 0.5 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
=10mA ;RBE=∞
C
I
=4A ;IB1=0.8A; IB2=-2A
C
800 V
μs
1.0
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1185
PACKAGE OUTLINE
3
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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