Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1180
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in audio and radio
frequency power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
ICM Collector current-peak 2.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 110 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 1.2
=25℃ 20
T
C
W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1180
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=10mA; IB=0 110 V
(BR)CEO
I
Collector-base breakdown voltage
(BR)CBO
Emitter-base breakdown voltage
(BR)EBO
V
Collector-emitter saturation voltage IC=1A; IB=0.2A 0.7 V
CEsat
V
Base-emitter saturation voltage IC=1A; IB=0.2A 1.3 V
BEsat
I
Collector cut-off current VCB=120V; IE=0 1.0
CBO
I
Emitter cut-off current VEB=3V; IC=0 1.0
EBO
hFE DC current gain IC=150mA ; VCE=5V 100
=100μA; IE=0
C
I
=100μA ; IC=0
E
120 V
5 V
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1180
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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