Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1170
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V)
·Low Collector Saturation Voltage: V
APPLICATIONS
·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 120V(Min)
(BR)CEO
= 1.5V(Max)@ (IC= 3A, IB= 3mA)
CE(sat)
B
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
J
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 6 A
Collector Current-Peak 10 A
Base Current-Continuous 1 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
Storage Temperature -55~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1170
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Switching Times
t
on
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V
Collector Cutoff Current VCB= 120V; IE= 0 10 μA
Emitter Cutoff Current VEB= 6V; IC= 0 10 μA
DC Current Gain IC= 3A; VCE= 2V 2000
Output Capacitance
Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz
Turn-on Time 0.5 μs
I
= 0; VCB= 10V; f
E
= 1MHz
test
70 pF
= 30V, RL= 10Ω,
V
t
stg
t
f
Storage Time 5.5 μs
Fall Time
CC
= 3A; IB1= -IB2= 3mA,
I
C
1.5 μs
isc Website：www.iscsemi.cn
2
Loading...