Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD1162
DESCRIPTION
·High DC Current Gain : h
·High Switching Speed
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for high voltage, low speed switching industrial
use.
ABSOLUTE MAXIMUM RATINGS(T
= 400(Min.)@IC= 2A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 500 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 5 A
Base Current-Peak 10 A
B Base Current-Continuous 0.5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
Junction Temperature 150
40
W
1.5
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD1162
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
BE(
I
CBO
h
FE-1
h
FE-2
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 300 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 5mA B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 5mA B 2.0 V
)
sat
Collector Cutoff Current VCB= 400V; IE= 0 10 μA
DC Current Gain IC= 2A ; VCE= 2V 400 3000
DC Current Gain IC= 3A ; VCE= 2V 100
Switching Times
t
on
t
s
t
f
Turn-On Time 1.0 μs
Storage Time 12 μs
Fall Time
= 3A; IB1= -IB2= 30mA;
I
C
RL= 50Ω,VCC≈150V
6 μs
h
Classifications
FE-1
M L K
400-800 600-1200 1000-3000
isc Website：www.iscsemi.cn
2
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