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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1158
DESCRIPTION
·With TO-220 package
·High speed switching
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Switching regulators
·DC-DC converters
·Solid state relay
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
IB Base current 2 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 80 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 10 V
T
=25℃
C
40 W
℃
T
Storage temperature -55~150
stg
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
R
Thermal resistance junction to case 1.25 ℃/W
th j-c
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1158
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=10mA ;IB=0 50 V
Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 10 V
Collector-emitter saturation voltage IC=2A, IB=0.1A 0.5 V
Base-emitter saturation voltage IC=2A, IB=0.1A 1.5 V
Collector cut-off current VCB=80V;IE=0 0.1 mA
Emitter cut-off current VEB=10V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 250
Switching times
ton Turn-on time 0.5 μs
I
=5A;IB1=-IB2=0.5A
C
=6Ω
ts Storage time 3.0 μs
R
L
Pw = 20μs, Duty≤2%
tf Fall time
0.8 μs
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1158
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1158
4
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