Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1154
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
(BR)CEO
= 200V (Min)
=25℃)
a
: V
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output for B/W TV set.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
P
C
T
stg
Collector-Base Voltage 350 V
Collector-Emitter Voltage 200 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 7 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1154
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
I
h
CES
EBO
FE
t
(sat)
(sat)
f
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V
Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.2 V
VCE= 350V; VBE= 0 0.1
Collector Cutoff Current
= 350V; VBE= 0;TC= 100℃
V
CE
1
mA
Emitter Cutoff Current VEB= 6V; IC= 0 5 mA
DC Current Gain IC= 5A ; VCE= 4V 11 36
Fall Time IC= 5A;IB= 0.5A;VBB= -5V;RB= 0.5Ω 0.75 μs
hFE Classifications
R Q P
11-15 11-22 18-36
isc Website：www.iscsemi.cn
Loading...