Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
DESCRIPTION ·
·With TO-220C package
·High collector-base breakdown voltage
: V
=200V(min)
CBO
APPLICATIONS
·For power switching and TV vertical
deflection output applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 4 A
ICM Collector current-Peak
PC Collector power dissipation
Collector-base voltage Open emitter 200 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 5 V
℃)
Ta=25℃ 1.8
=25℃ 30
T
C
5 A
W
Tj Junction temperature 150 ℃
T
Storage temperature -45~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CEO
I
EBO
hFE DC current gai n IC=4A ; VCE=5V 20
Collector-emitter breakdown voltage IC=50mA; IB=0 80 V
Emitter-base breakdown votage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V
Base-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V
Collector cut-off current VCE=200V; IB=0 50
Collector cut-off current VEB=5V; IC=0 50
⎧Α
⎧Α
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1136
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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