Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD113
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Power Dissipation
·High Current Capability
APPLICATIONS
·Audio power amplifier, power switching applications.
·DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
CBO
CEO
EBO
I
C
I
E
I
B
P
C
T
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 30 A
Emitter Current-Continuous -30 A
B Base Current-Continuous 5 A
Collector Power Dissipation
@TC=25℃
Junction Temperature 150
j
200 W
℃
T
stg
Storage Temperature Range -65~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD113
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
I
h
h
C
(sat)
(sat)
CBO
EBO
FE-1
FE-2
OB
f
T
Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 80 V
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V
Base-Emitter Saturation Voltage IC= 15A; IB= 3A 2.5 V
Collector Cutoff Current VCB= 50V; IE= 0 2 mA
Emitter Cutoff Current VEB= 10V; IC= 0 50 mA
DC Current Gain IC= 1A; VCE= 5V 50 300
DC Current Gain IC= 15A; VCE= 5V 10
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 1.5 MHz
I
= 0; VCB= 50V; f
E
= 1.0MHz
test
400 pF
h
Classifications
FE-1
O Y
50-150 100-300
isc Website：www.iscsemi.cn
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