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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1126
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High DC Current Gain
: h
= 1000(Min) @IC= 5A
FE
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 120V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 15 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1126
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE(
V
CE(
V
BE(
V
BE(
I
I
h
V
sat
sat
CBO
CEO
FE
ECF
sat
sat
Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞ 120 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA B 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.0 V
)-2
Base-Emitter Saturation Voltage IC= 5A; IB= 10mA B 2.0 V
)-1
Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A 3.5 V
)-2
Collector Cutoff Current VCB= 120V; IE=0 100 μA
Collector Cutoff Current VCE= 100V; RBE= ∞ 10 μA
DC Current Gain IC= 5A; VCE= 3V 1000 20000
C-E Diode Forward Voltage IF= 10A 3.0 V
Switching times
t
on
t
off
Turn-on Time 0.8 μs
I
= 5A, IB1= -IB2= 10mA
C
Turn-Off T ime
8.0 μs
isc Website：www.iscsemi.cn
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