Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1115K
DESCRIPTION
·With TO-220 package
·DARLINGTON
APPLICATIONS
·For high voltage switching
and ignitor applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-Peak 6 A
PT Total power dissipation
Collector-base voltage Open emitter 400 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
40 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1115K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
=2A ; PW=50μs
I
V
CEO(SUS)
V
CBO
V
EBO
V
CEsat
V
BEsat
I
CEO
Collector-emitter sustaining voltage
Collector-base breakdown voltage IC=0.1A ,IE=0 400 V
Emitter-base breakdown voltage IE=50mA ;IC=0 7 V
Collector-emitter saturation voltage IC=2A; IB=20mA 1.5 V
Base-emitter saturation voltage IC=2A; IB=20mA 2.0 V
Collector cut-off current VCE=300V; RBE=∞ 0.1 mA
C
f=50Hz, L=10mH
300 V
h
DC current gain IC=2A ; VCE=2V 500
FE
Switching times
ton Turn-on time 1.0 μs
IC=2A;IB1=- IB2=20mA
t
Turn-off time
off
22 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1115K
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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