Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1115
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High DC Current Gain
: h
= 500(Min)@IC= 2A
FE
APPLICATIONS
·Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(T
= 300V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 400 V
Collector-Emitter Voltage 300 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Peak 6 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1115
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CEO
h
FE
Switching times
t
on
t
off
Collector-Emitter Sustaining Voltage
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 400 V
Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 20mA B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 2A; IB= 20mA B 2.0 V
)
sat
Collector Cutoff Current
DC Current Gain IC= 2A; VCE= 2V 500
Turn-on Time 1.0
Turn-Off T ime
IC= 2A; L= 10mH, PW= 50μs;
f= 50Hz
V
= 300V; RBE= ∞
CE
= 2A, IB1= -IB2= 20mA
I
C
300 V
100
22
μA
μs
μs
isc Website：www.iscsemi.cn
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