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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1110
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Good Linearity of h
·Complement to Type 2SB849
APPLICATIONS
·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 120V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Current-Pulse 12 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
80 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1110
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
CE
BE
I
I
h
h
C
(sat)
(sat)
CBO
EBO
FE-1
FE-2
OB
f
T
FE-2
Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V
Base -Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 2.0 V
Collector Cutoff Current VCB= 120V; IE= 0 50 μA
Emitter Cutoff Current VEB= 3V; IC= 0 50 μA
DC Current Gain IC= 50mA; VCE= 5V 20
DC Current Gain IC= 1A; VCE= 5V 40 200
Output Capacitance
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V 15 MHz
Classifications
S R Q
I
= 0; VCB= 10V; f
E
= 1.0MHz
test
190 pF
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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