Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD111
DESCRIPTION
·High Power Dissipation= 100W@TC= 25℃
: P
C
·High Current Capability-
= 10A
: I
C
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
I
E
I
B
P
C
T
J
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 10 A
Emitter Current-Continuous -10 A
B Base Current-Continuous 3 A
Collector Power Dissipation @TC=25℃
Junction Temperature 150
Storage Temperature -65~150
100 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD111
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
(sat)
(sat)
f
T
OB
Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ 80 V
Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.5 V
Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA
Emitter Cutoff Current VEB= 10V; IC=0 10 mA
DC Current Gain IC= 1A; VCE= 5V 30 300
DC Current Gain IC= 5A; VCE= 5V 10
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V 1 MHz
Output Capacitance IE= 0; VCB= 50V; f= 1MHz 200 pF
h
Classifications
FE-2
R O Y
30-90 50-150 100-300
isc Website：www.iscsemi.cn
2
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