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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1105
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
(BR)CEO
= 80V (Min)
=25℃)
a
: V
·Wide Area of Safe Operation
·High Power and High Reliability
APPLICATIONS
·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 15 A
B Base Current-Continuous 30 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
j
Storage Temperature Range -65~150
200 W
℃
℃
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1105
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
V
h
(BR)CEO
(BR)EBO
CE
(sat)
BE
(on)
I
CBO
h
FE-1
h
FE-2
f
T
FE-2
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 5mA ; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2 V
Base-Emitter On Voltage IC= 5A ; VCE= 4V 1.5 V
Collector Cutoff Current VCB= 40V; IE= 0 30
DC Current Gain IC= 1A ; VCE= 4V 40
DC Current Gain IC= 5A ; VCE= 4V 40 120
Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V 1 MHz
Classifications
μA
P O
40-80 60-120
isc Website：www.iscsemi.cn
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