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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1073
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Low saturation voltage
APPLICATIONS
·Audio power amplifiers
·Relay and solenoid drivers
·Motor controls
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current-continuous 4 A
IB Base current 0.3 A
PC Collector power dissipation TC=25℃ 60 W
Tj Junction temperature 150 ℃
Collector-base voltage Open emitter 300 V
Collector-emitter voltage Open base 250 V
Emitter-base voltage Open collector 30 V
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 2.0 ℃/W
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1073
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-emitter breakdown voltage IC=10mA ; IB=0 300 V
Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V
Emitter-base breakdown voltage IE=10mA ; IC=0 30 V
Collector-emitter saturation voltage IC=1A;IB=10mA 1.5 V
Base-emitter saturation voltage IC=1A;IB=10mA 2.0 V
Collector cut-off current VCB=300V; IE=0 0.1 mA
Emitter cut-off current VEB=30V; IC=0 0.1 mA
DC current gain IC=2A ; VCE=2V 1000
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1073
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
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