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2SD1071
TRIPLE DIFFUSED PLANER TYPE
FUJI POWER TRANSISTOR
ULTRA HIGH
ββ
β
TRANSISTOR
ββ
HIGH VOLT AGE POWER AMPLIFIER
Features
High D.C. current gain
Low saturation voltage
High reliability
Applications
Audio power amplifiers
Relay & solenoid drivers
Motor controls
General purpose power amplifiers
Including zener diode
Outline Drawings
TO-220AB
1 : Base
2 : Collector
3 : Emitter
JEDEC TO-220AB
EIAJ SC-46
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Collector-Base voltage VCBO
Collector-Emitter voltage VCEO
Collector-Emitter voltage VCEO(SUS)
Emitter-Base voltage VEBO
Zener voltage Vz
Collector current IC
Base current IB
Collector power disspation PC
Operating junction temperature Tj
Storage temperature Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Zener voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
VZ
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
(450)
(450)
300
6
300
6
2.5
40
+150
-40 to +150
Test Conditions
ICBO = 0.1mA
ICEO = 1mA
IC = 8A
IEBO = 150mA
IZ = 0.1mA
VCBO = 300V
VEBO = 6V
IC = 4A, VCE = 2V
IC = 4A, IB = 15mA
V
V
V
V
V
A
A
W
°C
°C
Equivalent Circuit Schematic
Min. Typ. Max. Units
(450)
(450)
300
6
300 450
0.1
150
500
1.5
2.0
V
V
V
V
V
mA
mA
V
V
Thermal characteristics
Item Symbol Test Conditions
Thermal resistance
Rth(j-c) Junction to case
Min. Typ. Max. Units
3.0 °C/W
1
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2SD1071
Characteristics
FUJI POWER TRANSISTOR
Collector current IC[A]
Collector-Emitter voltage VCE[V]
Collector Output Characteristics
Saturation voltage VCE(sat), VBE(sat)[V]
Collector current IC[A]
Base and Collector Saturation Voltage
D.C. current gain hFE
Collector current IC[A]
DC Current Gain
Collector current IC[A]
Collector-Emitter voltage VCE[V]
Safe Operating Area
2
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