Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1049
·
DESCRIPTION
·With TO-3PN package
·High current,
·High speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Motor controls
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 25 A
IB Base current 5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
T
=25℃
C
80 W
℃
T
Storage temperature -55~150
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 1.55 ℃/W
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1049
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gain IC=25A ; VCE=5V 20
Switching times
ton Turn-on time 1.0
t
stg
tf Fall time
Collector-emitter breakdown voltage IC=10mA ;IB=0 80 V
Collector-base breakdown voltage IC=0.1mA ;IE=0 120 V
Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V
Collector-emitter saturation voltage IC=25A; IB=2.5A 1.5 V
Base-emitter saturation voltage IC=25A ;IB=2.5A 2.0 V
Collector cut-off current VCB=120V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
μs
=25A IB1=-IB2=2.5A
I
C
=3Ω;P
Storage time 2.5
R
L
Duty≤2%
=20μs;
W
μs
0.4
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1049
PACKAGE OUTLINE
3
Fig.2 outline dimensions
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