Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1044
DESCRIPTION
·High DC Current Gain
: h
·High Collector-Emitter Breakdown Voltage : V
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 700(Min.)@ IC= 1A, VCE= 4V
FE
(BR) CEO
= 80V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
V
P
T
CBO
CER
CEO
EBO
I
C
I
B
T
stg
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 6 A
B Base Current- Continuous 3 A
Collector Power Dissipation
C
j
=25℃
@T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
60 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD1044
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CER
V
(BR)CEO
V
CE
I
CBO
I
EBO
h
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 50mA, RBE= 1kΩ 100 V
Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 3A, IB= 30mA B 1.7 V
Collector Cutoff current VCB= 100V, IE= 0 10 μA
Emitter Cutoff Current VEB= 6V; IC= 0 10 mA
DC Current Gain IC= 1A; VCE= 4V 700 10000
h
classifications
FE
Q P O
700-2500 2000-5000 4000-10000
isc Website：www.iscsemi.cn
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