Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1037
DESCRIPTION ·
·With MT-200 package
·Excellent safe operating area
·High current capability
APPLICATIONS
·For electrical supply ,DC-DC
converters and low frequency
power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 30 A
PC Collector power dissipation TC=25℃ 180 W
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 6 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1037
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
hFE DC current gai n IC=10A ; VCE=4V 20
fT Transition frequency IC=1A ; VCE=4V 1.5 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 210 pF
Collector-emitter breakdown voltage IC=50mA; IB=0 120 V
Collector-emitter saturation voltage IC=10 A;IB=1 A 0.5 V
Base-emitter saturation voltage IC=10 A;IB=1 A 1.5 V
Collector cut-off current VCB=80V; IE=0 5 μA
Emitter cut-off current VEB=6V; IC=0 5 μA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1037
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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