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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1032
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Large Collector Power Dissipation
·Complement to Type 2SB812
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 60V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Collector Current-Peak 8 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
60 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1032
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
(sat)
(on)
Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.5 V
Base-Emitter On Voltage IC= 3A ; VCE= 4V 2 V
Collector Cutoff Current VCE= 30V ; IB= 0 700
Collector Cutoff Current VCE= 60V ; VBE= 0 400
Emitter Cutoff Current VEB= 5V; IC= 0 1 mA
DC Current Gain IC= 1A ; VCE= 4V 40 250
DC Current Gain IC= 3A ; VCE= 4V 15
Switching times
t
on
t
off
Turn-On Time 0.2
Turn-Off T ime
IC= 4A ,IB1= -IB2= 0.4A
1.4
μA
μA
μs
μs
h
Classifications
FE-1
R Q P
40-90 70-150 120-250
isc Website：www.iscsemi.cn
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