Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD103
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Power Dissipation: P
Complement to Type 2SB503
APPLICATIONS
·Designed for audio power amplifier, power switching, DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 50V(Min)
(BR)CEO
= 25W(Max)@TC=25℃
C
=25℃)
a
V
V
V
T
CBO
CEO
EBO
I
C
I
E
I
B
P
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 3 A
Emitter Current-Continuous -3 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150
Storage Temperature -65~150
25 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SD103
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
(sat)
(on)
Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 50 V
Collector-Base Breakdown Voltage IC= 10mA; IE= 0 80 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V
Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V
Collector Cutoff Current VCB= 50V; IE= 0 20
Emitter Cutoff Current VEB= 10V; IC= 0 200
DC Current Gain IC= 0.5A; VCE= 5V 30 300
DC Current Gain IC= 2.5A; VCE= 5V 15
μA
μA
f
T
C
OB
Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V 1 MHz
Output Capacitance IE= 0; VCB= 10V; f= 1MHz 200 pF
isc Website：www.iscsemi.cn
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