Page 1
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
20
0.75
150
–55 ~ +150
7
8
5
CE(sat)
.
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Rank Q R
h
FE1
230 ~ 380 340 ~ 600
Conditions
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VEB = 7V, IC = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 2A
IC = 3A, IB = 0.1A
*2
*2
*2
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
min
20
7
230
150
typ
max
0.1
1.0
0.1
600
150
50
*2
Pulse measurement
Unit
µA
µA
µA
V
V
1
V
MHz
pF
1
Page 2
Transistor
2SD965
PC — Ta IC — V
1.0
)
W
(
0.8
C
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Ta=75˚C
25˚C
–25˚C
Collector current IC (A
)
C
IC/IB=30
)
CE
2.4
2.0
)
A
(
1.6
C
1.2
0.8
Collector current I
0.4
0
0 2.42.01.60.4 1.20.8
Ta=25˚C
IB=7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage VCE (V
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Ta=–25˚C
Collector current IC (A
C
IC/IB=30
25˚C
75˚C
)
IC — V
6
VCE=2V
5
)
A
(
4
C
3
2
Collector current I
1
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
hFE — I
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
Ta=75˚C
Ta=75˚C
25˚C
–25˚C
BE
25˚C
–25˚C
)
C
VCE=2V
Ta=25˚C
)
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
– 0.01
– 0.1 –1 –10
– 0.03
Emitter current IE (A
2
fT — I
E
– 0.3 –3
VCB=6V
Ta=25˚C
)
)
pF
(
Cob — V
100
80
ob
60
40
20
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
IE=0
f=1MHz
Ta=25˚C
)
A
(
Collector current I
)
Area of safe operation (ASO)
100
30
I
CP
10
I
C
C
3
1
0.3
0.1
0.03
0.01
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
t=1s
Single pulse
Ta=25˚C
t=10ms
)
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