Datasheet 2SD0602A Datasheet (Panasonic)

Transistors

2SD0602A

Silicon NPN epitaxial planer type

For general amplification

Complementary to 2SB0710A

■ Features

• Low collector to emitter saturation voltage V

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

EBO

CP

C

C

j

stg

60 V
50 V

5V

1A
500 mA
200 mW
150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10°

1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package

Marking Symbol: X

+0.25

+0.2

–0.05

1.50

(0.65)

–0.1

1.1

+0.2

–0.3

2.8

+0.3

1.1

0 to 0.1

Unit: mm

+0.10

0.16

–0.06

5°

–0.1

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V

1

Forward current transfer ratio

*

Collector to emitter saturation voltage

1

*

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank Q R S No-rank

h

FE1

85 to 170 120 to 240 170 to 340 85 to 340

Marking symbol XQ XR XS X

Product of no-rank is not classified and have no indication for rank.

VCB = 20 V, IE = 0 0.1 µA
IC = 10 µA, IE = 060V
IC = 10 mA, IB = 050V
IE = 10 µA, IC = 05V

2

*

VCE = 10 V, IC = 150 mA 85 340
VCE = 10 V, IC = 500 mA 40

= 300 mA, IB = 30 mA 0.35 0.6 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 6 15 pF

ob

1

2SD0602A Transistors

PC  T

240

200

(mW)

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

V

 I

100

(V)

CE(sat)

0.03

0.01

Collector to emitter saturation voltage V

30

10

3

1

0.3

0.1

0.01

CE(sat)

Ta = 75°C

25°C

−25°C

0.1 1 10

0.03 0.3 3

Collector current IC (A)

a

C

IC / IB = 10

IC  V

IB = 10 mA

9 mA

8 mA

7 mA

6 mA

CE

5 mA

800

700

600

(mA)

C

500

400

300

200

Collector current I

100

0

02048 1612

Collector to emitter voltage VCE (V)

V

 I

BE(sat)

25°C

Ta = −25°C

75°C

0.1 0.3 1 3 10

)

V

(

BE(sat)

Base to emitter saturation voltage V

0.03

0.01

100

30

10

3

1

0.3

0.1

0.01 0.03

Collector current IC (A

Ta = 25°C

4 mA

3 mA

C

IC / IB = 10

2 mA

1 mA

)

IC  I

800

700

600

(mA)

C

500

400

300

200

Collector current I

100

0

0108642

B

Base current IB (mA)

hFE  I

300

250

FE

Ta = 75°C

200

25°C

−

25°C

150

100

Forward current transfer ratio h

50

0

0.01

0.1 1 100.03 0.3 3

C

Collector current IC (A

VCE = 10 V

= 25°C

T

a

VCE = 10 V

)

fT  I

240

200

)

MHz

(

160

T

120

80

Transition frequency f

40

0

−1 −3 −10 −30 −100−2 −20−5 −50

Emitter current IE (mA

2

E

VCB = 10 V
T

= 25°C

a

Cob  V

12

)
pF

10

(

ob

8

6

4

2

Collector output capacitance C

0

1

)

3 10 30 100220550

Collector to base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

120

)
V

(

100

CER

80

60

40

20

Collector to emitter voltage V

0

)

V

 R

CER

1310 30 100 300 1 000

Base to emitter resistance RBE (kΩ

BE

IC = 2 mA
T

a

= 25°C

)