Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SD601A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB709A
Features
■
●
High foward current transfer ratio hFE.
●
Low collector to emitter saturation voltage V
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
200
100
200
150
–55 ~ +150
7
CE(sat)
.
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
*
h
Rank classification
FE1
Marking Symbol ZQ ZR ZS
Rank Q R S
h
FE1
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
CE(sat)
f
T
NV
C
ob
VCB = 20V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
VCE = 2V, IC = 100mA
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
VCB = 10V, IE = 0, f = 1MHz
Conditions
160 ~ 260 210 ~ 340 290 ~ 460
min
60
50
7
160
90
typ
0.1
150
110
3.5
max
0.1
100
460
0.3
Unit
µA
µA
V
V
V
V
MHz
mV
pF
1
Page 2
Transistor
2SD601A
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — V
BE
200
160
)
mA
(
C
120
80
Collector current I
40
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
Ta=75˚C
25˚C
–25˚C
VCE=10V
CE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
0108264
)
Collector to emitter voltage VCE (V
IC — I
240
VCE=10V
Ta=25˚C
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 1000800200 600400
)
Base current IB (µA
Ta=25˚C
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
B
)
1200
1000
)
µA
(
800
B
600
400
Base current I
200
0
01.00.80.2 0.60.4
)
Base to emitter voltage VBE (V
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
IB — V
BE
VCE=10V
Ta=25˚C
V
— I
CE(sat)
25˚C
C
IC/IB=10
Ta=75˚C
–25˚C
Collector current IC (mA
)
)
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
2
VCE=10V
fT — I
E
300
)
240
MHz
(
T
180
120
60
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
)
Emitter current IE (mA
VCB=10V
Ta=25˚C
)
240
200
)
mV
(
160
120
80
Noise voltage NV
40
0
10 30 100 300 1000
NV — I
C
VCE=10V
G
=80dB
V
Function=FLAT
Ta=25˚C
Rg=100kΩ
Collector current IC (mA
22kΩ
4.7kΩ
)
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