Page 1
Transistor
2SD592, 2SD592A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB621 and 2SB621A
Features
■
●
Large collector power dissipation PC.
●
Low collector to emitter saturation voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD592
2SD592A
2SD592
2SD592A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–55 ~ +150
CE(sat)
Ratings
30
60
25
50
5
1.5
1
750
150
Unit: mm
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
.
Unit
V
V
V
A
A
mW
˚C
˚C
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD592
2SD592A
2SD592
2SD592A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
Conditions
VCB = 20V, IE = 0
min
typ
max
0.1
Unit
µA
30
IC = 10µA, IE = 0
V
60
25
IC = 2mA, IB = 0
V
50
IE = 10µA, IC = 0
*1
VCE = 10V, IC = 500mA
VCE = 5V, IC = 1A
IC = 500mA, IB = 50mA
IC = 500mA, IB = 50mA
*2
*2
*2
*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
85
50
5
160
0.2
0.85
340
0.4
1.2
200
20
*2
Pulse measurement
V
V
V
MHz
pF
1
Page 2
Transistor
2SD592, 2SD592A
PC — Ta IC — V
1.0
)
W
(
0.8
C
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Ta=75˚C
25˚C
C
–25˚C
Collector current IC (A
)
IC/IB=10
)
CE
1.50
1.25
)
A
(
1.00
C
0.75
0.50
Collector current I
0.25
0
0108264
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage VCE (V
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
25˚C
Ta=–25˚C
Collector current IC (A
C
IC/IB=10
75˚C
)
1.2
VCE=10V
Ta=25˚C
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
012108264
)
Base current IB (mA
hFE — I
600
FE
500
400
300
Ta=75˚C
200
100
Forward current transfer ratio h
0
0.01 0.1 1 1000.03 0.3 30
Collector current IC (A
IC — I
25˚C
–25˚C
B
)
C
=10
V
CE
)
fT — I
E
200
VCB=10V
Ta=25˚C
)
)
160
MHz
MHz
(
(
T
T
120
80
40
Transition frequency f
Transition frequency f
0
–1 –3 –10 –30 –100
Emitter current IE (mA
Emitter current IE (mA
2
Cob — V
50
)
pF
(
40
ob
30
20
10
Collector output capacitance C
0
1 3 10 30 100
)
)
Collector to base voltage VCB (V
CB
IE=0
f=1MHz
Ta=25˚C
120
)
V
(
100
CER
80
60
40
20
Collector to emitter voltage V
0
0.1 1 10 1000.3 3 30
)
Base to emitter resistance RBE (kΩ
V
— R
CER
BE
IC=10mA
Ta=25˚C
2SD592A
2SD592
)
Page 3
Transistor
4
10
3
10
)
)
Ta
(
2
10
Ta=25˚C
(
CEO
I
CEO
I
10
1
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
I
CEO
2SD592, 2SD592A
— Ta
VCE=10V
)
3
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