Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC937
DESCRIPTION
·High Breakdown Voltage : V
·High Reliability
APPLICATIONS
·Designed for TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1200V(Min)
CBO
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
C
T
J
Collector-Base Voltage 1200 V
Collector-Emitter Voltage 500 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 2.5 A
Collector Current-Pulse 6 A
Collector Power Dissipation
= 25℃
@ T
C
Junction Temperature 125 ℃
22 W
T
stg
Storage Temperature Range -45~125 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC937
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
CBX
I
EBO
t
(sat)
(sat)
f
Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 500 V
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 1.8 V
Collector Cutoff Current VCB= 1200V; VEB= 1.5V 1 mA
Emitter Cutoff Current VEB= 6V; IC= 0 0.2 mA
Fall Time
IC= 2.5A, I
L
= 10μH
B
= 0.8A, I
B
1
= -1.1A;
B
2
1.2 μs
isc Website：www.iscsemi.cn
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