Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC898
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·Low Collector Saturation Voltage : V
APPLICATIONS
·Designed for amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 150V (Min)
(BR)CEO
= 1.5V(Max.)@ IC= 6A
CE(sat)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
P
C
T
stg
Collector-Base Voltage 150 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
Collector Power Dissipation
@T
=25℃
C
Junction Temperature 150 ℃
j
Storage Temperature Range -55~150 ℃
80 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC898
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
I
h
(sat)
CBO
EBO
FE
(sat)
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 150 V
Collector-Emitter Saturation Voltage IC= 6A; IB= 1A B 1.5 V
Base-Emitter Saturation Voltage IC= 6A; IB= 1A B 1.8 V
Collector Cutoff Current VCB= 150V; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 1A; VCE= 5V 50
isc Website：www.iscsemi.cn
Loading...