Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC867
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:V
=400V(min)
CBO
APPLICATIONS
·For high voltage and switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 400 V
CBO
V
Collector-emitter voltage Open base 150 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 1 A
ICM Collector current-peak 2 A
PD Total power dissipation TC=25℃ 23 W
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC867
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=30mA; IB=0 150 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=1A; IB=0.2 A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=1A; IB=0.2 A 1.5 V
BEsat
I
Collector cut-off current VCB=400V;IE=0 100 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 100 μA
EBO
hFE DC current gain IC=0.1A ; VCE=3V 50
fT Transition frequency IC=0.2A ; VCE=10V 8 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC867
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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