Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC792
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·For voltage regulator,inverter,switching
mode power supply applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
PC Collector power dissipation
Collector-base voltage Open emitter 400 V
Collector-emitter voltage Open base 300 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
50 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC792
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA ;IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=1.5A; IB=0.3A 5.0 V
CEsat
V
Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V
BEsat
I
Collector cut-off current VCB=300V; IE=0 50 μA
CBO
I
Emitter cut-off current VEB=5V; IC=0 50 μA
EBO
h
DC current gain IC=0.3A ; VCE=10V 30 200
FE
fT Transition frequency IC=0.1A ; VCE=10V 10 MHz
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC792
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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