Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC790
DESCRIPTION
·Low Collector Saturation Voltage : V
·DC Current Gain : h
·Complement to Type 2SA490
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1.4(V)(Max)@ IC= 2A
CE(sat)
= 40-240 @ IC= 0.5A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
E
T
stg
Collector-Base Voltage 50 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 3 A
Emitter Current-Continuous -3 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
25 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC790
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
f
T
(on)
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 40 V
Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.4 V
Base-Emitter On Voltage IC= 2A; VCE= 2V 1.8 V
Collector Cutoff Current VCB= 30V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 100
DC Current Gain IC= 0.5A; VCE= 2V 40 240
DC Current Gain IC= 2A; VCE= 2V 13
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 2V 3 MHz
μA
μA
C
h
OB
FE-1
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 70 pF
Classifications
R O Y
40-80 70-140 120-240
isc Website：www.iscsemi.cn
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