Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC789
DESCRIPTION ·
·With TO-220C package
·Low collector saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 70 V
CBO
V
Collector-emitter voltage Open base 70 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 4 A
IB Base current 1 A
PC Collector power dissipation
℃)
T
=25℃
C
30 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC789
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Collector-emitter breakdown voltage IC=25m A;IB=0 70 V
(BR)CEO
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=2 A;IB=0.2 A 1.0 V
CEsat
V
Base-emitter saturation voltage IC=2 A;IB=0.2 A 1.5 V
BEsat
I
Collector cut-off current VCB=70V; IE=0 0.1 mA
CBO
I
Emitter cut-off current VEB=5V; IC=0 0.1 mA
EBO
h
DC current gain IC=0.5A ; VCE=5V 40 240
FE
fT Transition frequency IC=0.5A ; VCE=10V 3 MHz
hFE classifications
O R Y
40-80 70-140 120-240
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC789
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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