Page 1
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC643A
DESCRIPTION ·
·With TO-3 package
·High voltage,high reliability
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2.5 A
PC Collector power dissipation TC=25℃ 50 W
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 700 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC643A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
fT Transition frequency IC=0.1A ; VCE=10V 2 MHz
Collector-emitter sustaining voltage IC=100mA; IB=0 700 V
Emitter-base breakdown voltage IE=1mA; IC=0 5 V
Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V
Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V
Collector cut-off current VCB=500V;IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 100 μA
DC current gain IC=2A ; VCE=15V 5
2
Page 3
固电半导体
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC643A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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