Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5993
DESCRIPTION
·Good Linearity of h
·High Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Complement to Type 2SA2140
APPLICATIONS
·Power amplification
·For TV VM circuit
ABSOLUTE MAXIMUM RATINGS(T
FE
= 180V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
T
Collector-Base Voltage 180 V
Collector-Emitter Voltage 180 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 1.5 A
Collector Current-Peak 3.0 A
Collector Power Dissipation
=25℃
@ T
a
C
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
J
2.0
W
20
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5993
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
sat
I
CBO
I
EBO
h
FE
f
T
C
OB
Switching Time, Resistance Loaded
t
on
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.5 V
)
Collector Cutoff Current VCB= 180V; IE= 0 100
Emitter Cutoff Current VEB= 6V; IC= 0 100
DC Current Cain IC= 0.1A; VCE= 5V 60 240
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V; f= 10MHz 130 MHz
Output Capacitance
Turn-on Time 0.1
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
μA
μA
10 pF
μs
I
= 0.4A, IB1= -IB2= 0.04A;
t
stg
t
f
Storage Time 0.5
Fall Time
C
V
CC
= 100V
0.1
h
Classifications
FE
Q P
60-140 120-240
isc Website：www.iscsemi.cn
2
μs
μs
Loading...