Page 1
Transistor
Medium power transistor (30V, 2A)
2SC5916
!
!External dimensions (Units : mm)
!
!Features
!!
1) High speed switching. (Tf : Typ. : 20ns
at IC
2) Low saturation voltage, typically
(Typ. : 200mV
= 1.0A, IB = 0.1A)
at IC
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2113
!
Applications
Low frequency amplifier
High speed switching
!
!Structure
!!
NPN Silicon epitaxial planar transistor
!
!Packaging specifications
!!
Taping
TL
3000
Type
Package
Code
Basic ordering unit
(pieces)
2SC5916
!!!!
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
(Ta=25°C)
Symbol
V
CBO
V
CEO
EBO
V
I
C
I
CP
P
C
Tj
Tstg
= 2A)
−55~+150
!!
TSMT3
(1) Base
(2) Emitter
(3) Collector
Limits Unit
30
30
6
2
4
500
150
V
V
V
A
A
mW
°C
°C
2.8
1.6
)
1
(
0.95
1.9
0.95
)
2
(
0.16
0.3 0.6
Abbreviated symbol : UY
∗1
∗2
0.4
)
3
(
0.85
0.7
Each lead has same dimensions
0 0.1
2.9
1.0MAX
2SC5916
1/3
Page 2
Transistor
!
!Electrical characteristics (T a= 25°C)
!!
Parameter Symbol
Collector−base breakdown voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
BV
BV
BV
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
V
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
!!!!
FE
h
RANK
QR
120-270 180-390
!
!Electrical characteristic curves
!!
10
(A)
C
1
0.1
COLLECTOR CURRENT : I
0.01
COLLECTOR EMITTER VOLTAGE : VCE (V)
100ms
DC
Single non repoetitive pulse
1100.1 100
Fig.1 Safe operating area
1000
FE
100
10ms
1ms
VCE=5V
CE
=3V
V
Ta=25°C
CE
=2V
V
CEO
CBO
EBO
I
CBO
I
EBO
CE(sat)
FE
h
fT
C
ob
T
on
T
stg
Tf
1000
100
SWITCHING TIME (ns)
10
0.01 0.1
10
1
(sat)(V)
CE
Typ. Max.
Min.
30
30
120
−
−
−
6
−
−
−
−
−
200
−−
−
250
−
15
25
−
100
−
−
20
Tstg
Ton
Tf
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Ta=125°C
−
−
−
1.0
1.0
400
390
−
−
−
−
−
1
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Ta=25°C
V
CC
C/IB
I
IC/IB=10/1
Conditions
C
=100µA
I
I
C
=1mA
E
=100µA
I
V
CB
=20V
EB
=4V
V
I
C
=1.0A, IB=0.1A
V
CD
=2V, IC=100mA
V
CE
=10V, IE=−100mA, f=10MHz
V
CB
=10V, IE=0, f=1MHz
C
=2A
I
B1
=200mA
I
B2
=−200mA
I
CC
−25V
V
1000
=25V
=10/1
FE
100
10
DC CURRENT GAIN : h
10
1
0.001 0.01 0.1 101
Fig.3 DC current gain vs. collector
10
1
(sat)(V)
CE
2SC5916
Ta=125°C
Ta=−40°C
COLLECTOR CURRENT : IC (A)
current
Ta=25°C
Ta=25°C
VCE=2V
10
DC CURRENT GAIN : h
1
0.001 0.01 0.1 101
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector
current
C
(A)
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.001 0.01 0.1
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
Ta=−40°C
C
(A)
101
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
Fig.6 Collector-emitter saturation voltage
IC/IB=20/1
IC/IB=10/1
0.001 0.10.01 101
COLLECTOR CURRENT : I
vs. collector current
C
(A)
2/3
Page 3
Transistor
10
Ta=−40°C
1
(sat) (V)
BE
Ta=100°C
0.1
VOLTAGE : V
BASE EMITTER SATURATION
0.01
0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)
Fig.7 Base-emitter saturation voltage
vs. collector current
Ta=25°C
100
10
IC/IB=10/1
Ta=25°C
f=1MHz
10
1
Ta=100°C
0.1
COLLECTOR CURRENT : IC (A)
0.01
0 0.5 1 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.8 Ground emitter propagation
characteristics
Ta=25°C
Ta=−40°C
VCE=2V
2SC5916
1000
100
10
TRANSITION FREQUENCY : fT (MHz)
1
EMITTER CURRENT : IE (A)
Ta=25°C
CE
V
=10V
−10−1−0.1−0.01−0.001
Fig.9 Transition frequency
1
COLLECTOR OUTPUT CAPACITANCE : COB (pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
1001010.1
Fig.10 Collector output capacitance
!
!Switc hing ch aract eristi cs measur ement circuit s
!!
V
IN
P
W
PW 50 S
Duty cycle 1%
Base current
waveform
90%
Collector current
waveform
Ton Tstg Tf
10%
RL=12.5Ω
B1
I
I
I
C
CC
25V
B2
I
B1
I
B2
I
C
V
3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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