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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5887
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
·High Speed Switching
·Low Saturation Voltage-
: V
·Complement to Type 2SA2098
APPLICATIONS
·Relay drivers, lamp drivers, motor drivers.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
= 50V(Min)
(BR)CEO
= 0.4V(Max)@ (IC= 7A; IB= 0.35A) B
CE(sat)
=25℃)
a
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
J
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 15 A
Collector Current-Pulse 20 A
B Base Current-Continuous 3 A
Total Power Dissipation @TC=25℃
Total Power Dissipation @Ta=25℃
Junction Temperature 150
Storage Temperature -55~150
30
2.0
W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5887
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
Switching times
Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 50 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A B 0.4 V
Base-Emitter Saturation Voltage IC= 7A; IB= 0.35A B 1.4 V
Collector Cutoff Current VCB= 40V; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V; IC= 0 10 μA
DC Current Gain IC= 1A; VCE= 2V 180 560
Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 100 pF
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 300 MHz
t
on
t
stg
t
f
Turn-on Time 50 ns
Storage Time 700 ns
Fall Time
IC= 5A, IB1= -IB2= 0.25A,
= 20V
V
CC
40 ns
isc Website：www.iscsemi.cn
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