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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5885
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·Wide Area of Safe Operation
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CES
EBO
I
C
I
B
CP
C
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 1500 V
Emitter-Base Voltage 5 V
Collector Current- Continuous 6 A
B Base Current- Continuous 3 A
Collector Current-Pulse 9 A
Collector Power Dissipation
@ T
=25℃
a
Collector Power Dissipation
@ TC=25℃
2
W
30
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5885
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
h
FE
V
ECF
f
T
Switching times; Resistive load
t
stg
t
f
Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 2.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 1.5 V
Collector Cutoff Current
DC Current Gain IC= 3A; VCE= 5V 5 10
C-E Diode Forward Voltage IF= 3A 2.0 V
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; f= 0.5MHz 3 MHz
Storage Time 5.0 μs
Fall Time
= 1000V; IE= 0
V
CB
= 1500V; IE= 0
V
CB
= 3A, IB1= 0.75A; IB2= -1.5A
I
C
0.5 μs
50
1.0
μA
mA
isc Website：www.iscsemi.cn
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