Page 1
Transistors
Power transistor (60V, 0.5A)
2SC5877S
!!!!Features
1) High speed switching.
(Tf : Typ. : 80ns
at IC = 500mA)
2) Low saturation voltage, typically
(Typ. : 150mV at IC = 100mA, IB = 10mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2089S
!Applications
Small signal low frequency amplifier
High speed switching
!!!!Structure
NPN Silicon epitaxial planar transistor
!!!!Packaging specifications
Taping
TP
5000
Type
2SC5877S
Package
Code
Basic ordering unit (pieces)
!!!!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
DC
Pulsed
Symbol
V
CBO
VCEO
VEBO
ICP
PC
Tj
Tstg
IC
!!!!External dimensions (Unit : mm)
SPT
(1) Emitter
(2) Collector
(3) Base
Limits Unit
60
60
6
0.5
1.0
300
150
−55 to 150
3.0
(15Min.)
(1) (2) (3)
Symbol : C5877S
V
V
V
A
A
mW
°C
°C
4.0 2.0
3Min.
0.45
2.5
5.0
∗1
2SC5877S
0.450.5
Taping specifications
1/3
Page 2
Transistors
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Condition
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
!!!!h
FE RANK
Q
120−270
R
180−390
!!!!Electrical characteristic curves
10
(A)
C
1
100ms
10ms
1ms
0.1
Single
COLLECTOR CURRENT : I
non repetitive
Pulsed
0.01
0.1 100101
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
FE
100
10
DC CURRENT GAIN : h
1
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
500µs
DC
Ta=25°C
VCE=5V
CE
=3V
V
CE
=2V
V
Collector Current (ΙΙ)
BV
BV
BV
V
Tstg
I
CBO
I
EBO
CE (sat)
h
f
Cob
Ton
Tf
CEO
CBO
EBO
60
60
6
−
−
−
FE
T
120
−
−
−
−
−
1000
100
SWITCHING TIME : (ns)
10
0.01 101 0.1
COLLECTOR CURRENT : IC (A)
10
1
(V)
CE (sat)
0.1
COLLECTOR SATURATION
VOLTAGE : V
0.01
0.001 1010.10.01
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
−
−
−
−
−
150
−
300
5
70
130
80
Tstg
Tf
Ton
−
−
−
1.0
1.0
300
390
−
−
−
−
−
Ta=25°C
CC=25V
V
C / IB=10 / 1
I
Fig.2 Switching Time
IC / IB=10 / 1
Ta=125°C
Ta=25°C
Ta= −40°C
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
C
=1mA
I
I
C
=100µA
I
E
=100µA
CB
=40V
V
V
EB
=4V
I
C
=100mA
B
=10mA
I
V
CE
=2V
I
C
=50mA
V
CE
=10V
E
= −100mA
I
f=10MHz
V
CB
=10V
I
E
=0mA
f=1MHz
I
C
=500mA
IB1=50mA
I
B2
= −50mA
V
CC
25V
1000
FE
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
DC CURRENT GAIN : h
1
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
10
1
(V)
CE (sat)
0.1
COLLECTOR SATURATION
VOLTAGE : V
0.01
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.6
Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2SC5877S
∗1
∗1
∗2
Collector Current (Ι)
IC / IB=20 / 1
C
/ IB=10 / 1
I
VCE=2V
Ta=25°C
2/3
Page 3
Transistors
10
1
(V)
BE (sat)
0.1
BASE EMITTER SATURATION
VOLTAGE : V
0.01
0.001 10.10.01
COLLECTOR CURRENT : IC (A)
Fig.7 Base-Emitter Saturation
Voltage vs. Collecter Current
100
10
Ta=125°C
Ta=25°C
Ta= −40°C
IC / IB=10 / 1
Ta=25°C
f=1MHz
2SC5877S
1
(A)
C
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
COLLECTOR CURRENT : I
0.01
0 1.61.51.41.31.21.110.90.80.70.60.50.40.30.20.1
BASE TO EMITTER VOLTAGE : VBE (V)
VCE=2V
Fig.8 Grounded Emitter
Propagation Characteristics
1000
100
10
TRANSITION FREQUENCY : fT (MHz)
1
0.001 1010.10.01
EMITTER CURRENT : IE (A)
Fig.9 Transition Frequency
Ta=25°C
CE
=10V
V
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
1
0.1 1 10 100
BASE TO COLLECTOR VOLTAGE : V
Fig.10
Collector Output Capacitance
(V)
CB
!!!!Switching characteristics measurement circuits
V
IN
P
W
PW 50 S
Duty cycle ≤ 1%
Base current
waveform
90%
Collector current
waveform
B1
I
I
B2
10%
Ton Tstg Tf
RL=50Ω
I
C
CC
25V
V
I
B1
I
B2
I
C
3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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