Datasheet 2SC5868 Datasheet (ROHM)

Transistors

Medium power transistor (60V, 0.5A)

2SC5868

zFeatures

1) High speed switching. (Tf : Typ. : 80ns

at IC = 500mA)

2) Low saturation voltage, typically (Typ. : 75mV

at IC = 100mA, IB = 10mA)

3) Strong discharge power for inductive load and capacitance load.

4) Complements the 2SA2090

zApplic ations Small signal low frequency amplifier High speed switching

zStructure NPN Silicon epitaxial planar transistor

zPackaging specifications

Taping

TL

3000

Type

2SC5868

Package Code Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage Collector-emitter voltage Emitter-base voltage

Collector current

DC Pulsed

Power dissipation Junction temperature Range of storage temperature

∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land

Symbol

V V V

Tstg

CBO

CEO

EBO

I

CP

P

Tj

C

zExternal dimensions (Unit : mm)

TSMT3

(1) Base (2) Emitter (3) Collector

Limits Unit

60 60

6

0.5

1.0 500 150

−55 to 150

Abbreviated symbol : VS

V V V A A

mW

°C °C

0.95

1.9

0.95

0.16

0.3 0.6

2.8

1.6

)

1

(

)

2

(

0 0.1

∗1 ∗2

0.4

)

2.9

3

(

0.85

0.7

1.0MAX

Each lead has same dimensions

2SC5868

1/3

Transistors

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Condition

Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Corrector output capacitance

Turn-on time Storage time Fall time

∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits

zhFE RA NK

Q

120−270

R

180−390

zElectrical characteristic curves

10

(A)

C

1

100ms 10ms

0.1

Single

COLLECTOR CURRENT : I

non repetitive Pulsed

0.01

0.1 100101

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Safe Operating Area

1000

FE

100

10

DC CURRENT GAIN : h

1

0.001 10.10.01

COLLECTOR CURRENT : IC (A)

Fig.4 DC Current Gain vs.

Collector Current (ΙΙ)

1ms

DC

500µs

Ta=25°C

VCE=5V

CE=3V

V

CE=2V

V

BV BV BV

V

Tstg

I

CBO

I

EBO

CE (sat)

h

Cob

Ton

Tf

CEO CBO EBO

60 60

6

−

FE

f

T

120

−

1000

100

SWITCHING TIME : (ns)

10

0.01 1010.1

10

1

(V)

CE (sat)

0.1

COLLECTOR SATURATION

VOLTAGE : V

0.01

0.001 10.10.01

COLLECTOR CURRENT : IC (A)

Fig.5

Collector-Emitter Saturation

Voltage vs. Collector Current (Ι)

1.0

300

390

−

Ta=25°C

CC

=25V

V

C

/ IB=10 / 1

I

−

75

−

300

5

70

130

80

Tstg

Tf

Ton

COLLECTOR CURRENT : IC (A)

Fig.2 Switching Time

IC / IB=10 / 1

Ta=125°C Ta=25°C Ta= −40°C

V V V

µA µA

mV

−

MHz

pF

ns ns ns

I

C

=1mA

I

C

=100µA

E

=100µA

I V

CB

=40V

V

EB

=4V

I

C

=100mA

B

=10mA

I V

CE

=2V

I

C

=50mA

V

CE

=10V

E

= −100mA

I f=10MHz V

CB

=10V

I

E

=0mA

f=1MHz IC=500mA

IB1=50mA I

B2

= −50mA

V

CC

25V

1000

FE

100

Ta=125°C Ta=25°C Ta= −40°C

10

DC CURRENT GAIN : h

1

0.001 10.10.01

COLLECTOR CURRENT : IC (A)

Fig.3 DC Current Gain vs.

10

1

(V)

CE (sat)

0.1

COLLECTOR SATURATION

VOLTAGE : V

0.01

0.001 10.10.01

COLLECTOR CURRENT : IC (A)

Fig.6

Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ)

2SC5868

∗1

∗2

Collector Current (Ι)

IC / IB=20 / 1

C

/ IB=10 / 1

I

VCE=2V

Ta=25°C

2/3

Transistors

10

1

(V)

BE (sat)

0.1

BASE EMITTER SATURATION

VOLTAGE : V

0.01

0.001 10.1 0.01

COLLECTOR CURRENT : IC (A)

Fig.7 Base-Emitter Saturation

Voltage vs. Collecter Current

100

10

Ta=125°C Ta=25°C Ta= −40°C

IC / IB=10 / 1

Ta=25°C f=1MHz

2SC5868

1

(A)

C

Ta=125°C Ta=25°C Ta= −40°C

0.1

COLLECTOR CURRENT : I

0.01 0 1.61.51.41.31.21.110.90.80.70.60.50.40.30.20.1

BASE TO EMITTER VOLTAGE : VBE (V)

VCE=2V

Fig.8 Grounded Emitter

Propagation Characteristics

1000

100

10

TRANSITION FREQUENCY : fT (MHz)

1

0.001 1010.10.01

EMITTER CURRENT : IE (A)

Fig.9 Transition Frequency

Ta=25°C

CE

=10V

V

COLLECTOR OUTPUT

CAPACITANCE : Cob (pF)

1

0.1 1 10 100

BASE TO COLLECTOR VOLTAGE : V

Fig.10

Collector Output Capacitance

(V)

CB

zSwitching characteristics measurement circuits

V

IN

P

W

PW 50 S Duty cycle ≤ 1%

Base current waveform

90%

Collector current waveform

B1

I

B2

10%

Ton Tstg Tf

RL=50Ω

I

C

I

CC

25V

V

B1

B2

I

C

3/3

Appendix

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Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0