Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5803
DESCRIPTION
·High Breakdown Voltage : V
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high voltage color display horizontal
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min)
CBO
deflection output applications.
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 12 A
Collector Current- Peak 24 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
70 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC5803
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CES
I
CBO
I
EBO
h
FE-1
h
FE-2
Switching Times
t
stg
t
f
Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 3.0 V
Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V
Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA
Collector Cutoff Current VCB= 800V; IE= 0 10 μA
Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA
DC Current Gain IC= 1A; VCE= 5V 15 40
DC Current Gain IC= 8A; VCE= 5V 5.5 8.5
Storage Time 4.0 μs
Fall Time
I
= 7A, IB1= 1.4A; IB2= -2.8A;
C
= 200V; RL= 28.6Ω
V
CC
0.3 μs
isc Website：www.iscsemi.cn
2
Loading...