Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5802
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Wide area of safe operation
APPLICATIONS
·For high voltage color display horizontal
deflection output applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
ICM Collector current-Peak 30 A
PC Total power dissipation
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 800 V
Emitter-base voltage Open collector 6 V
℃)
T
=25℃
C
60 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5802
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=6A; IB=1.5A 3.0 V
CEsat
V
Base-emitter saturation voltage IC=6A; IB=1.5A 1.5 V
BEsat
I
Collector cut-off current VCE=1400V; VBE=0 1.0 mA
CES
I
Collector cut-off current VCB=800V; IE=0 10 μA
CBO
I
Emitter cut-off current VEB=4V; IC=0 1.0 mA
EBO
h
DC current gain IC=1A ; VCE=5V 15 48
FE-1
h
DC current gain IC=6A ; VCE=5V 7 10
FE-2
V
=200V; IC=6A;IB1=1.2A
tf Fall time
CC
IB2=-2.4A;RL =33.3Ω
0.1 0.3 μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5802
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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