Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SC5764
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulators applications.
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
C
T
J
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 7 A
Collector Current-Peak 14 A
Total Power Dissipation
=25℃
@ T
a
Total Power Dissipation
=25℃
@ T
C
Junction Temperature 150
2
W
30
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistors 2SC5764
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
I
V
(BR)CEO
Collector-Emitter Breakdown Voltage
= 5mA; RBE= ∞
C
400 V
V
(BR)CBO
V
(BR)EBO
V
CE(
V
BE(
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 700 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V
)
sat
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V
)
sat
Collector Cutoff Current VCB= 400V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 10
DC Current Gain IC= 0.8A; VCE= 5V 20 50
DC Current Gain IC= 4A; VCE= 5V 10
DC Current Gain IC= 1mA; VCE= 5V 10
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 80 pF
μA
μA
f
T
Switching times
t
on
t
stg
t
f
Current-Gain—Bandwidth Product IC= 0.8A; VCE= 10V 17 MHz
Turn-on Time 0.5
I
= 5A, IB1= 1A; IB2= -2A;
Storage Time 2.5
Fall Time
C
RL= 40Ω; VCC= 200V
h
Classifications
FE-1
M N
20-40 30-50
isc Website：www.iscsemi.cn
2
0.25
μs
μs
μs
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