This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
• Reduces Board Space
• High h
• Low V
• ESD Performance: Human Body Model; u 2000 V,
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• These are Pb−Free Devices
, 210−460 (typical)
FE
, < 0.5 V
CE(sat)
Machine Model; u 200 V
http://onsemi.com
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
MAXIMUM RATINGS (T
Rating
Collector-Base VoltageV
Collector-Emitter VoltageV
Emitter-Base VoltageV
Collector Current − ContinuousI
= 25°C)
A
SymbolValueUnit
(BR)CBO
(BR)CEO
(BR)EBO
C
50Vdc
50Vdc
5.0Vdc
100mAdc
THERMAL CHARACTERISTICS
RatingSymbolMaxUnit
Power Dissipation (Note 1)P
Junction TemperatureT
Storage Temperature RangeT
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
D
J
stg
260mW
150°C
−55 ~ +150°C
1
BASE2EMITTER
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
2
1
XX = Specific Device Code
(B9 = 2SC5658M3T5G
RM = 2SC5658RM3T5G)
M= Date Code
XXM
ORDERING INFORMATION
DevicePackageShipping
2SC5658M3T5GSOT−723
(Pb−Free)
2SC5658RM3T5G SOT−723
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)V
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)I
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)I
Collector-Emitter Saturation Voltage (Note 2)
(I
= 60 mAdc, IB = 5.0 mAdc)
C
DC Current Gain (Note 2)
(V
= 6.0 Vdc, IC = 1.0 mAdc)2SC5658M3T5G
CE
= 6.0 Vdc, IC = 1.0 mAdc)2SC5658RM3T5G
(V
CE
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)f
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)C
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
SymbolMinTypMaxUnit
V
(BR)CBO
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
50−−Vdc
50−−Vdc
5.0−−Vdc
−−0.5
−−0.5
mA
mA
Vdc
−−0.4
h
FE
T
OB
120
215
−
−
560
375
−180−MHz
−2.0−pF
−
http://onsemi.com
2
Page 3
2SC5658M3T5G, 2SC5658RM3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
60
50
40
30
20
, COLLECTOR CURRENT (mA)
C
I
10
0
2
1.5
1
0.5
, COLLECTOR‐EMITTER VOLTAGE (V)
CE
V
0
0.01
20
= 25°C
T
A
0
24 68
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC − V
0.1110100
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
CE
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
IB = 20 mA
TA = 25°C
1000
100
DC CURRENT GAIN
10
0.1
900
800
700
600
500
400
300
COLLECTOR VOLTAGE (mV)
200
100
0
0.2
TA = 75°C
TA = 25°C
TA = - 25°C
110100
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
Figure 2. DC Current Gain
TA = 25°C
V
= 5 V
CE
0.5151020406080 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. On Voltage
18
16
14
, INPUT CAPACITANCE (pF)
ib
12
C
10
0
6
5
4
, CAPACITANCE (pF)
3
ob
C
2
123470
VEB (V)
1
Figure 5. Capacitance
http://onsemi.com
3
10203040
VCB (V)
Figure 6. Capacitance
Page 4
2SC5658M3T5G, 2SC5658RM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
b1
e
2X
3X
L2
BOTTOM VIEW
D
3
1
TOP VIEW
1
−X−
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
−Y−
A
E
b
2X
X0.08Y
3X
L
SIDE VIEW
H
E
C
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MINNOM MAX
A0.450.500.55
b0.150.210.27
b10.250.310.37
C0.070.120.17
D1.151.201.25
E0.750.800.85
e
H1.151.201.25
L
L20.150.200.25
0.40 BSC
E
0.29 REF
RECOMMENDED
SOLDERING FOOTPRINT*
2X
0.40
2X
0.27
PACKAGE
OUTLINE
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2SC5658M3/D
4
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