Datasheet 2sc5626 Datasheet [en, ja]

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Page 1

DESCURIPTION

〈Transistor〉

2SC5626

For High Frequency Amplify Application

Silicon NPN Epitaxial Type (Super Mini type)

Mitsubis hi 2SC5626 is a super mini packege resin sealed silic on NPN epitaxial ty pe t ransistor. It is designed f or high f requency amplify application.

FEATURE

・Super mini pac kage f or easy mount ing

・High gain band width produc t

PPLICATION

Small t y pe machine high f requency amplif y applicat ion

OUTLINE DRAWING

2.1

0.425 0.425

1.25

1.30

0.65

2.0

0.65

0.9

0.7

0～0.1

TERMINAL CONNECTOR

: BASE

: EMITTER

: COLLECTOR

JEITA : SC-70 JEDEC : -

Unit:mm

0.3

0.15

MAXI MUM RATI N GS (Ta=25 ℃)

SYMBOL PARAMETER

VCBO

VEBO

VCEO

I C

Tstg

SYMBOL

V(BR)CB O V(BR)CE O I C=100μA, RBE=∞ 20 VC to E break down v oltage

(BR)EB O

I CB O

I EBO

hFE

VCE(sat)

f T

Cob

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collec tor current

Col lector diss ipation(Ta= 25℃)

Junction temperature

Storage t emprature

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER TEST CONDITION S

C to B break down v oltage

E to B break down v oltage

Collector cut cff current

Emitter cut off current

DC f orward current gain C to E Saturation voltage

Gain band width product

Col lector output capacitance

RATINGS UNIT

150

+150

-55to+150

I C=50μA, I E=0mA

I C=50μA, I C=0m A

VCB=20V, I E=0

EB=3V, I C=0

CE=10V, I C=5mA

C=10mA, I B=1mA

VCE=5V, I E=-10mA

CB=6V, I E=0, f =1MH z

℃ ℃

MIN

600

TYPE NAME

LIMITS

TY P

148

0.1

1100

1.2

MAR KI N G

S W

MAX

0.5

0.3

1.5

UNIT

μA μA

MH z

SAHAYA EL ECTRONICS　CORPORATION

Page 2

特性

)

〈Transistor〉

2SC5626

For High Frequency Amplify Application

Silicon NPN Epitaxial Type (Super　Mini type)

エミッタ接地伝達特性

Common emitter output

100

VCE=6V Ta=25℃

0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

base to collector voltage VBE(V)

ベース・エミッタ間電圧　V

DC forward current gain

直流電流増幅率－コレクタ電流特性

VS. collector current

10000

Ta=25℃ VCE=10V

1000

Common emitter transfer

180μA

0 2 4 6 8 10 12 14 16 18 20

コレクタ・エミッタ間電圧 VCE(V

(V)

collector to emitter voltage VCE(V)

collector to emitter voltage VS. collector current

Ta=25℃ IC/IB=10/1

エミッタ接地出力

160μA

140μA

120μA

コレクタ・エミッタ飽和電圧

－コレクタ電流特性

Ta=25℃

100μA

80μA

60μA

40μA

20μA

IB=0μA

100

0.1 110 100 1000

collector current IC(mA)

コレクタ電流 I

Gain band width product

利得帯域幅積－エミッタ電流特性

VS. Emitter current

10000

VCE=5V Ta=25℃

1000

100

0.1 1 10100

emitter current IE(mA)

エミッタ電流 I

E (mA)

C(mA)

0.1

0.01

0.11 10 100

collector current IC(mA)

collector output/input capacitance VS. Collector to Base Voltage

100.0

f=1MHz IE=0A IC=0A Ta=25℃

10.0

1.0

0.1

0.11.010.0 100.0

コレクタ電流 I

入出力容量－ベース電圧特性

Cob

Cib

コレクタ・ベース電圧　V

collector to base voltage VCB(V)

エミッタ・ベース電圧　V

emitter to base voltage VEB(V)

C(mA)

(V)

SAHAYA EL ECTRONICS　CORPORATION

Page 3

〈Transistor〉

2SC5626

For High Frequency Amplify Application

Silicon NPN Epitaxial Type (Super　Mini type)

Collector to base time constant VS. Emitter current

100

0.1 1.0 10.0

コレクタ・ベース時定数

－エミッタ電流特性

emitter current IE(mA)

エミッタ電流　I

(mA)

VCB=5V f=31.8MHz Ta=25℃

SAHAYA EL ECTRONICS　CORPORATION

Page 4

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the

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