Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5439
DESCRIPTION
·With TO-220F package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator applications
·High voltage switching applications
·DC-DC converter applications
·Inverter lighting applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 16 A
IB Base current 1 A
PC Collector power dissipation
Collector-base voltage Open emitter 1000 V
Collector-emitter voltage Open base 450 V
Emitter-base voltage Open collector 9 V
℃)
Ta=25℃
TC=25℃
2
W
30
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5439
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
Switching times
Collector-emitter breakdown voltage IC=10mA; IB=0 450 V
(BR)CEO
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
ton Turn-on time 0.2 μs
Collector-base breakdown voltage IC=1mA; IE=0 1000 V
Collector-emitter saturation voltage IC=3.2A; IB=0.64 A 1.0 V
Base-emitter saturation voltage IC=3.2A; IB=0.64 A 1.5 V
Collector cut-off current VCB=1000V; IE=0 100 μA
Emitter cut-off current VEB=7V; IC=0 10 μA
DC current gain IC=1mA ; VCE=5V 10
DC current gain IC=1A ; VCE=5V 14 34
ts Storage time 2.0 3.5 μs
tf Fall time
2
=0.64A ;IB2=1.28A
I
B1
≈200V;RL=62.5Ω
V
CC
0.15 μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5439
PACKAGE OUTLINE
3
Fig.2 outline dimensions
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC5439
4
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